The behavior of electrons in semiconductor quantum wells subjected to a high magnetic field is governed by their mutual interactions. The fractional quantum Hall effect is probably the most dramatic manifestation of these interactions: The Hall resistance is precisely quantized at h/e2 divided by either an integer or a simple fraction. More than 70 fractions have so far been observed.
The understanding of this phenomenon is at the focus of experimental and theoretical research at the past three decades. The research at our group makes use of various optical spectroscopy techniques, such as photoluminescence, absorption, photoluminescence excitation (PLE), photocurrent, and resistively detected NMR, to study various issues related to the behavior of the electron gas in this regime, and in particular, the electrons spin polarization at various fractions.
Optical Spectroscopy and Molecular Electronics
