CREM as a non contact electrical probe

Concentration profiles of impurities in gate oxides:

The z-profile of impurities in
5 nm SiO₂ on SiC,
probed by CREM at different resolving power conditions

See: APL 107, 173101 (2015)

CREM element specific I-V curves:

CREM can resolve selected sub-surface
layers in heterostructures and, thus,
provide unique E-tests of inner domains and interfaces

See: APL 94, 053116 (2009) ;
APL 94, 213501 (2009)