Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process. ALD film growth is self-limited and based on surface reactions, which makes achieving atomic scale deposition control possible. 

Most ALD reactions use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting manner. By keeping the precursors separate throughout the coating process, atomic layer thickness control of the film grown can be obtained as fine as atomic/molecular scale per monolayer.  

The Fiji Plasma ALD system provides flexibility and a variety of features. 

Available materials

Oxides and Nitrides of Al, Hf, Si, Zn, Ti, and Zr are available.  

Other metals can be added upon request. 

Three Deposition Modes

• Rapid film growth
• Thermal Expo Mode for ultra-high aspect ratio (>2,000:1) 
• Plasma Mode