Rapid Thermal Processing [RTP] is an advanced wafer processing technology used to expose wafers to heat over a short period of time. The term RTP applies to equipment that processes wafers at high throughput due to the ability to ramp temperature up and down in a matter of seconds. 

The system enables different applications such as annealing, oxidation and nitridation. The benefits of using rapid thermal annealing include: the removal of defects introduced by ion implantation; the activation of species with little movement of the dopants (impurities that have been added to semiconductors); increasing the density of deposited film; the changing of film-to-film or film-to-water substrate interfaces; changing the states of grown films, and moving the dopants from one film to another, or into the wafer substrate. 

Features

• Temperature range: RT to 1500°C  
• Ramp rate up to 200°C/sec on silicon. 
• Cooling rate up to 100°C/s with special equipment. 
• Gas mixing capability with mass flow controllers for N2, O2, Ar. 
• Up to 4-inch wafer size. 
• Vacuum range: Atmosphere to 2 E-5 Torr 
• Stainless steel cold wall chamber technology: 
  • High process reproducibility. 
  • Ultra clean and contamination-free environment. 
  • High cooling rates and low memory effect. 
• Pyrometer and thermocouple control. 
• Fast digital PID temperature controller. 
• Edge pyrometer viewport ensures enhanced temperature control of the susceptor for compound semiconductors and small samples.