The Inductively Coupled Plasma (ICP) etcher provides high chemical sensitivities with high etch rate. This SPTS ICP System uses fluorine-based gases for anisotropic deep silicon trench. The 13.56 MHz RF system produces a high-density, low- pressure, low-energy inductively coupled plasma. This type of plasma allows high selectivity and aspect ratio etching for depths greater than 250 microns. The system control is via a standard PC, which automatically loads a wafer into the process chamber. Once in the chamber, the wafer is placed onto a helium-cooled chuck during the process. The system is designed to etch a 100 mm (4 in.) wafer. 

In ICP system the ion density and ion energy can be controlled separately. Therefore, high etch rate can be achieved together with control over selectivity and damage. Both chemical and physical (ion-induced) etching can be controlled. 

ICP system enables the “Bosch” process in which etch-depths of hundreds of micrometers are achieved with almost vertical sidewalls. 

Features

• High etch rate. 
• Excellent uniformity. 
• Controls tilting of deep features across the wafer. 
• Rapier system with Dual HDP source, medium pressure, high neutral density which produce deep Si etching. 
• Bosch Process. 
• Gases CF4, SF6, C4F8, Ar, N2  
• enabling the etching of Si, SiO2, SiN and various kinds of polymers. 
• Electro-Static Clamping. 
• Flexible End-Point Detection. 
• Automatic loading system.