Hadas Shtrikman
The Henry and Gertrude F. Rothschild Senior Research Fellow Chair
Past Research
- Molecular Beam Epitaxy (MBE) of III-V semiconductor materials.
- Growth of doped and undoped quantum well heterostructures for photoluminescence studies.
- Growth of high quality two-dimensional electron gas and high electron mobility transistors.
- Growth of shallow two-dimensional electron gas structures where the Kondo effect was first observed.
- Study of growth on (N11) crystal planes to improve the quality and versatility of III-V structures.
- Growth on (311)A for producing p-type and p-n heterostructures.
- Growth on (511)A for achieving improved n-type heterostructures.
- Growth of particularly low density electron gas where the metal insulator transition was observed.
- Growth of inverted structures of either electrons or holes, the so-called ISIS (inverted semiconductor-insulator-semiconductor) structures where the density of 2D electrons or holes is modified by an as-grown back gate.