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Hadas Shtrikman
The Henry and Gertrude F. Rothschild Senior Research Fellow Chair
Research
Self-Catalyzed Growth of InAs Nanowires on Graphene by MBE
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Stacking-Faults-Free Zinc Blende GaAs Nanowires
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High aspect ratio gold-assisted InAs nanowires
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Growth of GaAs nanowires by self-assisted VLS-MBE
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Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires
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Growth of uniform, thin InAs nanowires with a perfect wurtzite structure for conductance measurements
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Growth and Study of strained InAs/GaAs core shell nanowires
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Study of core/shell GaAs/AlAs heterostructure nanowires
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Study of InAs nanowires intersections formation by growth on an (001) oriented InAs substrate
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Multimode Fabry-Pe’rot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires
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