Multimode Fabry-Pe’rot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires

We observed coherent electron transport in high-quality InAs nanowires suspended over a grove predefined in a Si/SiO2 substrate, which finally acts as the device gate. Growth of the InAs nanowires was carried out at low temperature by molecular beam epitaxy, using the well pursued gold assisted vapor liquid solid method. The growth of high crystalline quality InAs nanowires was obtained on the (011) InAs growth surface preferably to the commonly used (111)B growth surface. A low growth temperature was applied in order to reduce the possibility of incorporation of gold atoms from the catalyst droplet. We observed coherent transport involving more than a single one dimensional mode, manifested by Fabry-Perot conductance oscillations. The length of the Fabry-Perot conductance channel derived from the period of the conductance oscillations was found to be in agreement with the physical length of the device, namely the distance between two contacts. The high oscillations visibility we have measured suggest that the transport through the nanowire is nearly ballistic.